‘Ū‰ļ‹c”­•\(International Conference)ƒŠƒXƒg

yµ‘Ņu‰‰(Invited)z

  1. M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao, H. Hokari, and M. Yoshida, gCharacterization of Sputter Deposited ZnO Thin Film and Its Application to Thin-Film Transistorsh, 13th International Display Workshops (IDW f06) (2006, Shiga, Japan)
  2. T. Hirao, M. Furuta, and T. Hiramatsu, gZnO-based TFT for use in LCDh, International Conference on Metallurgical Coatings and Thin Films (2008, USA)
  3. T. Hirao, M. Furuta, and T. Hiramatsu, T. Matsuda, gZnO TFT for use in LCDh, Taiwan Display Workshop (2008, Taipei, Taiwan)
  4. T. Hirao, M. Furuta, T. Hiramatsu, H. Nitta, and T. Matsuda, gSynthesis of ZnO and its application to sophisticated devicesh, International Display Manufacturing Conference /Asia Display 2009 (2009, Taipei, Taiwan)
  5. T. Hirao, M. Furuta, T. Hiramatsu, H. Nitta, and T. Matsuda, gSynthesis of ZnO and its application to sophisticated devicesh, International Display Manufacturing Conference /Asia Display 2009 (2009, Taipei, Taiwan)
  6. S. Aihara, H. Seo, M. Kubota, N. Egami, T. Hiramatsu, M. Furuta, and T. Hirao, gStacked Image Sensor using Organic Photoconductive Films with ZnO TFT Readout Circuitsh, 16th International Display Workshops (IDW f09) (2009, Miyazaki, Japan)
  7. M. Furuta, T. Hiramatsu, T. Matsuda, T. Hirao, T. Nakanishi, and M. Kimura,gEffect of Channel/Gate-insulator Interface Treatment on Uniformity of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs)h, The 6th International Thin-Film Transistor Conference (ITC e10) (2010, Himeji, Japan)
  8. M. Furuta, T. Hiramatsu, T. Matsuda, and T. Hirao, gEffects of Interfacial Processes of Gate Dielectric on Electrical Properties and Reliability of Bottom-Gate ZnO TFTs.h, 10th International Meeting on Information Display/International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA DISPLAY 2010) (2010, Seoul, Korea)

yˆź”Źu‰‰z

y2010”Nz

  1. M. Furuta, T. Hiramatsu, T. Matsuda, T. Hirao, T. Nakanishi, and M. Kimura, gEffect of Channel/Gate-insulator Interface Treatment on Uniformity of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs)h, The Proceedings of the 6th International Thin-Film Transistor Conference (ITC e10), (2010, Himeji, Japan) pp.18-21
  2. H. Seo, S. Aihara, M. Nambu, T. Watabe, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, M. Furuta, H. Nitta, and T. Hirao, gStacked color image sensor using wavelength-selective organic photoconductive film with zinc oxide thin-film transistors as a signal readout circuith, Proceedings of SPIE, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI, 7356 (2010) 753602
  3. Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, T. Hirao, gPhoto-Leakage Current in ZnO TFTs for Transparent Electronics g, 2010 SID (Society for Information Display) International Symposium Digest of Technical Papers, (2010, Seattle, USA)
  4. M. Furuta, Y. Kamada, T. Hiramatsu, C. Li, S. Fujita, and T. Hirao, gBias-Temperature Instability in ZnO TFTs with a Stacked Gate Insulator g, The Proceedings of AM-FPD f10 (17th international Workshop on Active-Matrix Flatpanel Displays and Devices), (2010, Tokyo, Japan) pp.133-135
  5. D. Wang, C. Li, T. Kawaharamura, T. Matsuda, M. FurutaAT. Hirao, and T. Narusawa, gLow Temperature Post-annealing Effects on Structural and Optical Properties of Zn0.9Mg0.1O Thin Film Prepared by Radio Frequency Magnetron Sputteringh, The Proceedings of AM-FPD f10 (17th international Workshop on Active-Matrix Flatpanel Displays and Devices), (2010, Tokyo, Japan) pp.187-190
  6. C. Li, D. Wan, T. Kawaharamura, M. Furuta, and T. Hirao, "Characterization of ZnMgO/ZnO Thin Films Prepared by by Radio Frequency Magnetron Sputteringh, The Proceedings of AM-FPD f10 (17th international Workshop on Active-Matrix Flatpanel Displays and Devices), (2010, Tokyo, Japan) pp.183-186
  7. M. Furuta, T. Hiramatsu, T. Matsuda, and T. Hirao, gEffects of Interfacial Processes of Gate Dielectric on Electrical Properties and Reliability of Bottom-Gate ZnO TFTs.h, Proceedings of the 10th International Meeting on Information Display/International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA DISPLAY 2010), (2010, Seoul, Korea)
  8. Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao, gRole of Film Properties in subthreshold Characteristics of Zinc Oxide Thin-Film Transistorsh, Proceedings of the 10th International Meeting on Information Display/International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA DISPLAY 2010), (2010, Seoul, Korea)
  9. C. Li, D. Wang, T. Kawaharamura, T. Matsuda, H. Furuta, T. Hiramatsu, M. Furuta, and T. Hirao, gEffect of high pressure water vapor annealing on photoluminescent and structural properties of nano-structured ZnO/ZnMgO multiple layers prepared by radio frequency magnetron sputteringh, Proceedings of the 10th International Meeting on Information Display/International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA DISPLAY 2010), (2010, Seoul, Korea)

y2009”Nz

  1. C. Li, T. Kawaharamura, T. Matsuda, H. Furuta, T. Hiramatsu, M. Furuta, and T. Hirao, gFabrication of High Efficient Green Emission Zinc Oxide Films at Low Temperature by Radio Frequency Magnetron Sputteringh, 2009 SID (Society for Information Display) Digest of Technical Papers, (2009, Texas, USA) pp.1456-1459
  2. M. Furuta, T. Hiramatsu, T. Matsuda, H. Nitta, H. Furuta, C. Li, and T. Hirao, gStability of Zinc Oxide Thin-Film Transistors (ZnO TFTs)h, The Proceedings of AM-FPD f09 (16th International Workshop on Active-Matrix Flatpanel Displays and Devices), (2009, Nara, Japan) pp.89-92
  3. T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta and T. Hirao, gHigh quality SiO2 deposited at 150 ‹C by inductively coupled plasma chemical vapor deposition with pulsed substrate biash, The Proceedings of AM-FPD f09 (16th International Workshop on Active-Matrix Flatpanel Displays and Devices), (2009, Nara, Japan) pp.219-222
  4. Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, M. Furuta, and T. Hirao, gPhoto leakage current of ZnO TFTs in the visible lighth, The Proceedings of AM-FPD f09 (16th International Workshop on Active-Matrix Flatpanel Displays and Devices), (2009, Nara, Japan) pp.65-66
  5. C. Li, T. Matsuda, Y. Nakanishi, K. Ichinomiya, M. Furuta, T. Hiramatsu, H. Furuta, T. Kawaharamura, and T. Hirao, gComparison of different annealing gases effects on the optical emission properties of zinc oxide films deposited by radio frequency sputteringh, Technical Digest of 2009 22th International Vacuum Nanoelectronics Conference, (2009, Hamamatsu, Japan) pp.63-64
  6. M. Furuta, T. Hiramatsu, H. Furuta, and T. Hirao, gCrystallinity of microcrystalline silicon deposited by ICP-CVD with bipolar pulse substrate biash, Proceedings of the 16th International Display Workshops (IDW e09), (2009, Miyazaki, Japan) pp.287-288
  7. S. Aihara, H. Seo, M. Kubota, N. Egami, T. Hiramatsu, M. Furuta, and T. Hirao, gStacked image sensor using organic photoconductive films with ZnO TFT readout circuitsh, Proceedings of the 16th International Display Workshops (IDW f09), (2009, Miyazaki, Japan) pp. 2119-2122
  8. C. Li, T. Matsuda, T. Kawaharamura, Y. Nakanishi, K. Ichinomiya, H. Furuta, T. Hiramatsu, M. Furuta, and T. Hirao, gLow temperature annealing effects on ZnO thin films sputtering deposited on [100] silicon substrateh, Proceedings of the 16th International Display Workshops (IDW e09), (2009, Miyazaki, Japan) pp.983-984
y2008”Nz
  1. M. Furuta, T. Hiramatsu, T. Matsuda, H. Nitta, and T. Hirao, gInvestigation of Instability Mechanisms in Zinc Oxide Thin-Film Transistors under Bias Stressesh, Proceedings of the 15th International Display Workshops (IDW e08), (2008, Niigata, Japan) pp.1633-1636
  2. H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta, A. Hatta, K. Ishii, K. Okada, T. Komukai, Y. Morioka, T. Matsuda, C. Li and T. Hirao, gFabrication of Directly Grown Vertically Aligned CNT Pattern Emitter on Glassh, Proceedings of the 15th International Display Workshops (IDW e08) (2008, Niigata, Japan) pp.2041-2044
y2007”Nz
  1. M. Furuta, H. Tsubokawa, K. Shimamura and T. Hirao, gActivation Behavior of Boron Implanted Poly-Si Films Annealed by Rapid Thermal Processh Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.569-571
  2. M. Furuta, C. Li, T. Matsuda, H. Furuta, T. Hirao, M. Tachikawa, and T. Hiramatsu, gEffect of microstructure on optical properties of rf-sputtered ZnO films for ZnO TFTsh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.573-576
  3. T. Hiramatsu, M. Furuta, C. Li, H. Furuta, T. Matsuda, and T. Hirao, gInfluence of Ar Gas on Inductively Coupled Plasma Etching of ZnO Film in CH4/Arh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.577-579
  4. C. Li, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta and T. Hirao, gCharacterization of ZnO Films Fabricated by Radio Frequency Magnetron Sputtering under Different Substrate Temperatures for TFTs Applicationh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.565-568
  5. T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, and T. Hirao, gElectrical properties of ion implanted ZnO thin film for source and drain regions of ZnO TFTsh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.561-564
  6. H. Furuta, T. Hiramatsu, T. Matsuda, C. Li, M. Furuta, and T. Hirao, gFilm quality of low-temperature synthesized SiO2 insulator deposited by ICP-CVD using tetramethylsilaneh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.553-556
  7. H. Furuta, M. Furuta, S. Honda, M. Katayama, K. Oura, and T. Hirao, gSimulation Study of Bundle CNT Emitter Array for Field Emission Devicesh, Proceedings of the 14th International Display Workshops (IDW e07), (2007, Sapporo, Japan) pp.2193-2195
y2006”Nz
  1. T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, gHigh-Mobility Top-Gate Zinc Oxide Thin-Film Transistors (ZnO-TFTs) for Active-Matrix Liquid Crystal Displaysh, 2006 SID (Society for Information Display) International Symposium Digest of Technical Papers, (2006, San Francisco, USA) pp.17-19
  2. M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao, H. Hokari, and M. Yoshida, gCharacterization of Sputter Deposited ZnO Thin Film and Its Application to Thin-Film Transistorsh, Proceedings of the 13th International Display Workshops (IDW f06) (2006, Shiga, Japan) pp.677-680
  3. H. Furuta, M. Furuta, T. Matsuda, T. Hiramatsu, and T. Hirao gLow-Temperature Synthesis of SiO2 Insulator by ICP-CVD using Tetramethylsilaneh, Proceedings of the 13th International Display Workshops (IDW e06), (2006, Shiga, Japan) pp.973-975
  4. T. Hiramatsu, M. Furuta, T. Matsuda, H. Furuta, and T. Hirao, gInfluence of Deposition Pressure on Thermal Stability of ZnO Films Deposited by RF Magnetron Sputteringh, Proceedings of the 13th International Display Workshops (IDW e06), (2006, Shiga, Japan) pp.983-985